Strobe edge

200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2100, PC2700, or PC3200 • 256MB (32 Meg x 64), 512MB (64 Meg x 64) • V DD = V DD Q = +2.5V (-40B: V DD = V DD Q = +2.6V) • V DDSPD = +2.3V to +3.6V • 2.5V I/O (SSTL_2-compatible) • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Bidirectional data strobe (DQS) transmitted/received with data—that is, source-synchronous data capture • Differential clock inputs (CK and CK#) • Multiple internal device banks for concurrent operation • Selectable burst lengths (BL): 2, 4, or 8 • Auto precharge option • Auto refresh and self refresh modes: 7.8125μs maximum average periodic refresh interval • Serial presence-detect (SPD) with EEPROM • Selectable CAS latency (CL) for maximum compatibility • Dual rank • Gold edge contacts

BARRETTE MÉMOIRE RAM 512MB DDR400 Transcend TS64MLD72V4J 184 pins Quantité: 1 Features - JEDEC standard 2.6V ± 0.1V (400MHz) & 2.5V ± 0.2V (333MHz/266MHz) power supply - Double-data-rate architecture: two data transfers per clock cycle - Differential clock inputs (CK and /CK) - DLL aligns DQ and DQS transitions with CLK transition - Data I/O transactions on both edge of data strobe. - Burst Length: 2, 4, 8 - Data Sequence (Sequential & Interleave) - Serial Presence Detect with EEPROM - Support ECC error detection and correction - 100% tested for stability, compatibility and performance