Transistor npn

Lot de 5 x BD201 Transistor NPN 45V 8A TO-220 de marque Philips. 

Transistor VHF (FT: 2 GHZ) pour ampli RF.   Puissance de sortie 0,9W pour 30mW  d'excitation sous 13,5V à 175MHz.   VCE: 16V VCB: 36V. Visitez ma boutique, d'autres produits intéressants pour la radio s'y trouvent. Visit my shop, the other interesting products for the radio are there.

MOTOROLA RF DEVICE DATA The RF Line NPN Silicon RF Power Transistors Designed  for 12.5 Vdc UHF  large–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65% (Typ) Typical Performance at 512 MHz, 12.5 V, 5.0 W Output = 6.0 dB Series Equivalent Large–Signal Characterization Gold Metallized, Emitter Ballasted for Long Life and Reliability Capable of 30:1 VSWR Load Mismatch at 15.5 V Supply Voltage

Designed for 12.5 Vdc UHF large–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65% (Typ) • Typical Performance at 512 MHz, 12.5 V, 5.0 W Output = 6.0 dB • Series Equivalent Large–Signal Characterization • Gold Metallized, Emitter Ballasted for Long Life and Reliability • Capable of 30:1 VSWR Load Mismatch at 15.5 V Supply Voltage • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

Transistor VHF (ft 2 GHZ) pour ampli RF.   Puissance de sortie 0,9W pour 30mW  d'excitation sous 13,5V à 175MHz.   VCE: 16V VCB: 36V.

Un lot de 2 x 2N5179 - npn transistor VHF - UHF faible bruit - marque RCA Gold leads. Composants neufs.

The RF Line NPN Silicon RF Power Transistor... designed primarily for high-Voltage applications an a high-power linear amplfier from 2 to 30 MHz. Ideal for marine and base station equipment.     Specified 50 Volt, 30 MHz Characteristics     Output Power = 600 W     Minimum Gain = 10 dB     Efficiencv = 40% - intermodulation Distortion @: 600 W(PEP) - IMD = -30 dB - Diffused Emitter Resistors for Superior Ruggedness - Low Thermal Resistance